| PART |
Description |
Maker |
| TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication
GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| MASW4030G |
DC-4 GHz GaAs DPDT switch
GaAs SPDT Switch DC - 4 GHz
|
MA-Com
MACOM[Tyco Electronics]
|
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
| HMMC-3008 |
DC-16 GHz GaAs HBT MMIC Divide-by-8 Prescaler(DC-16 GHz 砷化镓HBT单片微波集成电路定标
|
Agilent(Hewlett-Packard)
|
| AA026P2-00 |
GT 35C 35#16 SKT PLUG
23.5-26.5 GHz GaAs MMIC Power Amplifier
23.526.5 GHz GaAs MMIC Power Amplifier
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| AT001D6-25 |
ER 14C 4#16 10#12 PIN RECP BOX 砷化镓集成电位数字衰分贝LSB的直千兆
GaAs IC 4 Bit Digital Attenuator 3 dB LSB DC-1 GHz
GaAs IC 4 Bit Digital Attenuator 3 dB LSB DC? GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| AM028S1-00 |
LJT 37C 37#22D PIN WALL RECP 26-33 GHz的砷化镓微波单片集成电路单平衡下变频混频
26-33 GHz GaAs MMIC Single Balanced Down Converter Mixer
26?3 GHz GaAs MMIC Single Balanced Down Converter Mixer
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| AA038N1-00 AA038N2-00 |
28-40 GHz的砷化镓MMIC低噪声放大器
GT 8C 2#0 6#12 PIN PLUG
280 GHz GaAs MMIC Low Noise Amplifier
28-40 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries, Inc.
Alpha Industries Inc
ALPHA[Alpha Industries]
http://
|
